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fast technology reported on september 12th,samsung electronics officially announced that it has begun mass production of the ninth-generation qlc v-nand flash memory, with a single capacity of 1tb (128gb).

just in april this year, samsung began mass production of the ninth-generation tlc v-nand flash memory, with only a gap of 4 months between the two.

samsung’s ninth-generation qlc nand flash memory incorporates several innovations:

first,channel hole etching(Channel Hole Etching)。

based on the dual-stack architecture, it achieves the highest number of cell stacking layers in the industry (specific details not disclosed). at the same time, it optimizes the storage cell area and peripheral circuits.the bit density is increased by about 86% over the previous generation.

second,preset stencils(Designed Mold)。

the word line spacing of the storage cell can be adjusted and controlled to ensure that the characteristics of the storage cells within the same cell layer and between cell layers remain consistent to achieve the best effect.data retention performance improved by approximately 20%, enhancing reliability.

third,prediction program(Predictive Program)。

ability to predict and control the state changes of storage units, and minimize unnecessary operations.write performance is doubled, and data input/output speed is increased by 60%.

fourth,low power design(Low-Power Design)。

the voltage required to drive the nand memory cell is reduced, and only the necessary bit lines are sensed.the data reading power consumption decreased by approximately 30% and 50% respectively.

samsung's ninth-generation qlc v-nand flash memory will first be used in consumer electronics products, and then gradually rolled out in the ufs, pc, and server fields.