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At the global storage event FMS 2024, Deyiwei delivered a keynote speech on improving 3D NAND reliability

2024-08-05

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Vic Ye


the speech topic:

Dynamic Read Retry Method —— Achieving Near-Zero Read Retry for 3D NAND Flash Memory

Forum SSDT-103-1:

Technologies to improve SSD durability and reliability

American time:

August 6, 3:40-4:45 p.m.

Place:

Santa Clara Convention Center, California

Ballroom F

Introduction to Deyi Micro Speech

Dr. Ye Min, Director of Memory Analysis Department of Deyiwei, will deliver a keynote speech entitled "Dynamic Read Retry Method —— Achieving Near-Zero Read Retry for 3D NAND Flash Memory" at the global storage event FMS 2024.

The reliability of flash storage devices will decrease after experiencing multiple P/E cycles, resulting in more Read Retry for error correction, which will lead to a serious decline in read performance. Therefore, the optimization of the Read Retry method is crucial to the read performance of flash memory. Dr. Ye Min's speech will lead us to explore the innovative dynamic Read Retry method in depth, explore and analyze how to improve the reliability of 3D NAND, achieve almost 0 Read Retry for 3D NAND, thereby greatly improving the read performance of the storage controller, achieving better performance control and wear management, and efficiently improving the life and performance of storage chips.

FMS 2024


Booth number: #750

Time: August 6-8, 2024

Location: Santa Clara Convention Center, California, USA

Deyiwei will fully display its full range of latest products and storage solutions including storage control chips and memory, share the latest storage technologies and application results, and welcome global industry partners to visit the booth for exchanges.