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Ultrafast Flash Memory Integration Process and Statistical Performance

The rapid development of artificial intelligence urgently requires high-speed non-volatile storage technology. The current mainstream non-volatile flash memory programming speed is generally in the hundreds of microseconds, which cannot support application needs. The preliminary research of the Zhou Peng-Liu Chunsen team of Fudan University showed that the two-dimensional semiconductor structure can increase its speed by more than a thousand times, realizing disruptive nanosecond-level ultra-fast storage flash memory technology. However, how to achieve large-scale integration and move towards real practical applications is still extremely challenging.

Starting from interface engineering, the team achieved the largest scale 1Kb nanosecond ultrafast flash memory array integration verification in the world for the first time, and proved that its ultrafast characteristics can be extended to sub-10 nanometers. On the afternoon of August 12, Beijing time, the relevant results were published in Nature Electronics under the title of "Large-Scale Integration Process of Two-Dimensional Ultrafast Flash Memory".

The team developed super-interface engineering technology, realizing heterogeneous interfaces with atomic-level flatness in large-scale two-dimensional flash memory. Combined with high-precision characterization technology, it shows that the integrated process is significantly better than the international level. Through strict DC storage window and AC pulse storage performance tests, it was confirmed that the yield of the two-dimensional new mechanism flash memory is as high as 98% at a nanosecond non-volatile programming speed in a 1Kb storage scale. This yield is higher than the 89.5% yield requirement for flash memory manufacturing in the international semiconductor technology roadmap.

At the same time, the research team developed a self-aligned process that does not rely on advanced lithography equipment. Combined with the original innovative ultrafast storage stacked electric field design theory, they successfully realized an ultrafast flash memory device with a channel length of 8 nanometers, which is currently the shortest channel flash memory device in the world and has broken through the physical size limit of silicon-based flash memory (about 15 nanometers). Supported by an atomically thin channel, this ultra-small device has 20 nanosecond ultrafast programming, 10 years of non-volatility, 100,000 cycle life, and polymorphic storage performance. This work will promote the industrial application of ultrafast disruptive flash memory technology.

Researcher Liu Chunsen from the National Key Laboratory of Integrated Chips and Systems, Institute of Frontier Technology of Chips and Systems, Fudan University, and Professor Zhou Peng from the School of Microelectronics are the corresponding authors of the paper, and Researcher Liu Chunsen and doctoral students Jiang Yongbo and Cao Zhenyuan are the first authors of the paper. The research work was funded by the Key R&D Program of the Ministry of Science and Technology, the Important Leading Talent Program of the National Natural Science Foundation of China, the Shanghai Basic Research Special Zone Program, the Shanghai Rising Star Project, and the support of the Innovation Platform of the Ministry of Education.

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Text: Jiang Peng Photos: Provided by the interviewee Editor: Gu Jun Responsible Editor: Fan Liping

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