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Source: Science and Technology Daily

On the 15th, the reporter learned from the Institute of Metal Research of the Chinese Academy of Sciences that the research team led by Liu Chi, Sun Dongming and Cheng Huiming, an academician of the Chinese Academy of Sciences,Invented a "hot emitter" transistor made of mixed-dimensional materials such as graphene and germanium, and proposed a new "stimulated emission" hot carrier generation mechanism.The relevant research results were published in the academic journal Nature on the 15th.

The effect of stimulated emission of carriers. Image source: Institute of Metal Research, Chinese Academy of Sciences

According to reports, this new transistor consists of two coupled "graphene/germanium" Schottky junctions. Carriers are injected from the graphene base, then diffuse to the emitter and excite carriers heated by the electric field, resulting in a sharp increase in current.This design allows the voltage change required to be less than 1 millivolt for every order of magnitude change in transistor current, breaking the Boltzmann limit of traditional transistors.In addition, the transistor also exhibits a negative differential resistance with a peak-to-valley current ratio of more than 100 at room temperature, demonstrating its potential for application in multi-valued logic computing.

The researchers said that this research has opened up a new field of transistor device research by controllably modulating hot carriers to increase current density and added a new member to the hot carrier transistor family.

Science and Technology Daily reporter Hao Xiaoming