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The rapid development of artificial intelligence urgently requires high-speed non-volatile storage technology. The current mainstream non-volatile flash memory programming speed is generally in the hundreds of microseconds, which cannot support application needs. The preliminary research of the Zhou Peng-Liu Chunsen team of Fudan University showed that the two-dimensional semiconductor structure can increase its speed by more than a thousand times, realizing disruptive nanosecond-level ultra-fast storage flash memory technology. However, how to achieve large-scale integration and move towards real practical applications is still extremely challenging.

Starting from interface engineering, the team achieved the largest-scale 1Kb nanosecond ultrafast flash memory array integration verification in the world for the first time, and proved that its ultrafast characteristics can be extended to sub-10 nanometers. On the afternoon of August 12, Beijing time, the relevant results were published in Nature Electronics under the title "A scalable integration process for ultrafast two-dimensional flash memory".

Ultrafast flash memory integration process and statistical performance. Image courtesy of Fudan University

The reporter of The Paper learned from Fudan University that the team has developed super-interface engineering technology, realizing heterogeneous interfaces with atomic-level flatness in large-scale two-dimensional flash memory, and combined with high-precision characterization technology, showing that the integration process is significantly better than the international level. Through strict DC storage window and AC pulse storage performance tests, it was confirmed that the yield of the two-dimensional new mechanism flash memory is as high as 98% at a nanosecond non-volatile programming speed in a 1Kb storage scale, which is higher than the 89.5% yield requirement for flash memory manufacturing in the International Technology Roadmap for Semiconductors.