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according to official news from the "jiufengshan laboratory", in september 2024, the laboratory achieved a milestone breakthrough in the field of silicon photonics integration-successfully lighting up a laser light source integrated into a silicon-based chip. the first successful implementation in the country.

with the development and application of large artificial intelligence models, as well as the development of technologies such as autonomous driving, the demand for chip computing power continues to increase. however, advanced semiconductor manufacturing processes are getting closer and closer to physical limits. the need to increase transistor density on a single chip the path is becoming more and more difficult, and the performance improvement or power consumption reduction that each generation of process improvement can bring is becoming more and more limited. it also brings about a sharp increase in costs, which also means that moore's law cannot continue to work. for this reason, many semiconductor manufacturers have turned their attention to advanced packaging technology, which is to increase the number of transistors and thereby improve performance by packaging multiple chips on the same substrate.

however, the more cores there are in a single package unit, the more interconnections between them, and the longer the data transmission distance. traditional electrical interconnection technology urgently needs to evolve and upgrade. compared with electrical signals, optical transmission is faster, has less loss, and has less delay. inter-chip optical interconnection technology is considered to be the key technology to promote the next generation of information technology revolution, and is also considered to be a breakthrough in integrated circuits in the post-moore era. ideal solution for bottlenecks such as power consumption, bandwidth and latency faced by technology development.

at present, the industry's most difficult challenge in the development of a fully integrated silicon photonic platform lies in the development and integration of the "heart" of the silicon photonic chip, that is, the light source on the silicon substrate that can emit light with high efficiency. this technology is one of the few remaining blank links in my country's optoelectronics field internationally.

this time, the jiufengshan laboratory's silicon photonics process team collaborated with partners to tackle a key problem and successfully heterobonded iii-v laser material epitaxial grains on an 8-inch silicon photonic wafer, and then carried out a cmos-compatible on-chip device manufacturing process. , successfully solved the difficulties of iii-v material structure design and growth, low material and wafer bonding yield, and heterogeneous integrated wafer on-wafer patterning and etching control. after nearly ten years of pursuit and research, we finally succeeded in lighting up the on-chip laser and achieving "chip light emission".

compared with traditional discrete packaged external light sources and fc micro-assembly light sources, jiufengshan laboratory's on-chip light source technology can effectively solve the process problems of traditional silicon photonic chips with insufficient coupling efficiency, long alignment adjustment time, and insufficient alignment accuracy. it breaks through mass production bottlenecks such as high production costs, large size, and difficulty in large-scale integration.

data show that hubei jiufengshan laboratory mainly focuses on compound semiconductor research and development and innovation, and will be officially put into operation in march 2023. within one and a half years since its establishment, jiufengshan laboratory has attracted nearly 30 semiconductor chain companies to live next to it, with a total valuation exceeding 10 billion yuan, and has cultivated more than 30,000 talents in the semiconductor field. during this year, jiufengshan laboratory also realized the operation of the 8-inch pilot line, and the first batch of wafers (high-precision gratings) successfully rolled off the production line, filling the domestic market for high linear density, ultra-high refractive index, and non-periodic blank of high-precision grating production technology.

on february 20, 2024, jiufengshan laboratory announced that the world's first 8-inch silicon photonic thin film lithium niobate optoelectronic integrated wafer was successfully rolled out of the laboratory. this achievement uses an 8-inch soi silicon photonic wafer bonded to an 8-inch lithium niobate wafer to monolithically integrate optoelectronic transceiver functions. it is currently the most advanced technology for silicon-based compound optoelectronic integration in the world. this achievement can realize large-scale manufacturing of high-end optical chips with ultra-low loss and ultra-high bandwidth, making it the optoelectronic integrated chip with the best overall performance in the world.

in addition to its own continuous innovation and breakthroughs, as one of the few public, open, neutral, and shared scientific research platforms in china, jiufengshan laboratory also cooperates with leading companies in the industry chain to develop common technologies based on "use". promote the verification of domestic semiconductor materials and equipment and build a compound semiconductor pilot platform.

in the jiufengshan laboratory, there are hundreds of projects running at the same time in the 9,000-square-meter clean room:

the etching and thin film deposition equipment developed by shanghai bangxin semiconductor technology co., ltd. has achieved mass production of multiple types of equipment with the help of jiufengshan laboratory.

wuhan yitiannuo technology co., ltd. and jiufengshan laboratory jointly developed silicon photonics and third-generation semiconductor wafer-level, chip-level, and device-level packaging and testing equipment, with test accuracy reaching the micron level.

the first set of high-end semiconductor wafer laser cutting series equipment developed by huagong technology passed the pilot test verification using the jiufengshan laboratory platform, and the equipment that obtained the test report has been successfully introduced into downstream enterprises.

shan na, chairman of yitiannuo technology co., ltd., said that with the introduction of jiufengshan laboratory platform, the company has expanded a number of new customers and obtained a number of orders. the next step will be to settle in jiufengshan science and technology park to further expand operations. scale.

the person in charge of jiufengshan laboratory previously stated in an interview with the media that we hope to work with more partners to light up the "lighthouse" of compound semiconductor platforms, technologies, and industries, and conduct cutting-edge exploration and research on technical problems in the next 3 to 10 years. technological research will break through the "breakpoints" in the entire industrial chain, bridge the gap in the integrated development of industry, academia and research, and lead the advancement of global compound semiconductor technology.

at present, nearly 30 leading compound semiconductor companies and innovative small and medium-sized enterprises have gathered around jiufengshan laboratory. by 2025, more than 100 industry chain companies will be gathered here, and 1 to 2 leading companies in subdivisions will be cultivated. in storage , compound semiconductors, sensors, advanced packaging and other subdivided areas to create a number of innovative products to form a compound semiconductor industry ecosystem.

editor: core intelligence - rurouni sword

source: jiufengshan laboratory, optics valley media center